ECW20N20 & ECW20P20
The ECW20P20-Z mosfet is specifically designed for audio power amplifier output stage applications.
They offer superb sonic characteristics and with the features listed below its not hard to see how they can help you to reduce size, cut costs and add real quality and functionality to your design.
These mosfets also have a negative temperature coefficient and completely thermally stable bias point without the need for emitter resistors, as used in bipolar amplifiers.
- Simplified drive circuitry requirements
- Inherent output anti-parallel diodes
- Excellent thermal characteristics
- Single live heatsink capability (source connected case)
- Very high bandwidth and slew rate
- No high frequency cross conduction
- Easy paralleling (devices available in selected categories to enhance paralleling performance)
- Soft clipping performance
- A wide safe operating area (SOA) and absence of secondary breakdown
- Reliable and robust performance when compared to bipolar solutions
- Simplified protection saving cost & reducing complexity
- Improvement of amplifier performance with awkward loads
- Oscillation-free operation
ECX10N20 & ECX10P20
EXICON Mosfets have been designed specifically for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design.
Freedom from secondary breakdown and thermal runaway make them extremely reliable and remove the need for protection circuitry.
These advantages together with wide bandwidth, low drive requirements, and ease of paralleling make it possible for the simple construction of robust amplifiers with excellent sonic characteristics.
- Tighter tolerence on Vsat (10V max)
- Specifically designed for audio amplifier applications
- High thermal conductivity
- Excellent frequency characteristics
- Integral protection diode
- Free from current concentration, resulting in a high resistance to electrical destruction
- Temperature characteristics which inherently protect against short circuit fault conditions and thermal runaway